BFR360FH6327: A Comprehensive Technical Datasheet and Application Overview

The BFR360FH6327 is a high-performance NPN silicon germanium (SiGe) heterojunction bipolar transistor (HBT) engineered for ultra-high-frequency applications. This component is a cornerstone in modern RF design, offering an exceptional blend of speed, gain, and linearity. Packaged in the compact and industry-standard SOT-343 (SC-70), it is ideally suited for space-constrained designs demanding top-tier performance.

Technical Datasheet Deep Dive

A thorough examination of the key electrical characteristics reveals the capabilities that make this transistor a preferred choice for RF engineers.

Frequency Performance: The BFR360FH6327 excels in speed-critical applications. It boasts a transition frequency (fT) of 25 GHz and a maximum oscillation frequency (fmax) of 45 GHz. These figures are paramount, indicating the frequency limits at which the transistor can effectively amplify a signal, making it suitable for microwave bands.

Gain and Noise Figure: The device offers a high small-signal forward current gain |h21| of 135 at 100 mA and 900 MHz. More critically, it features a very low noise figure (NF), typically 1.0 dB at 900 MHz and 1.5 dB at 1.8 GHz. This low noise is essential for receiver front-ends where signal integrity is crucial.

Linearity and Power Handling: The output third-order intercept point (OIP3) is typically 34 dBm at 900 MHz, a key metric highlighting its excellent linearity. This ensures minimal distortion when handling complex modulation schemes. It is characterized for operation at 2.5 V and 20 mA, a low-voltage profile beneficial for portable devices.

Absolute Maximum Ratings: Critical limits include a collector-emitter voltage (VCEO) of 3.5 V, a collector current (IC) of 30 mA, and a total power dissipation (Ptot) of 250 mW at 25°C. Operating within these ratings is vital for device longevity and reliability.

Application Overview

The combination of high fT, high linearity, and low noise figure opens a wide array of applications in wireless communication infrastructure and consumer electronics.

Cellular Infrastructure: It is perfectly suited for driver and final pre-driver stages in power amplifiers for base stations, particularly for 4G LTE and 5NR applications operating in sub-6 GHz bands.

Low-Noise Amplifiers (LNAs): Its superior noise figure makes it an excellent candidate for the first amplification stage in receiver paths for GPS, GSM, DCS, PCS, and UMTS systems, where amplifying weak signals with minimal added noise is critical.

General Purpose Amplification: The transistor can be deployed in VCO buffer stages, mixer LO drivers, and other general-purpose amplification tasks requiring high gain and stability up to X-band frequencies.

Portable and Battery-Operated Devices: The low operating voltage of 2.5 V aligns perfectly with the requirements of modern smartphones, IoT modules, and other battery-powered wireless devices, helping to extend battery life.

ICGOOODFIND: The BFR360FH6327 stands out as a superior SiGe HBT for RF and microwave circuits, delivering an optimal balance of high-frequency operation, exceptional linearity, and low noise performance in a miniature package, making it a versatile solution for next-generation wireless systems.

Keywords: SiGe HBT, Low Noise Amplifier (LNA), RF Transistor, High Frequency, OIP3 Linearity