Infineon IPD60R180P7S: High-Performance 600V CoolMOS™ Power Transistor
The Infineon IPD60R180P7S represents a significant advancement in high-voltage power MOSFET technology, leveraging Infineon’s innovative CoolMOS™ P7 superjunction technology. Designed for demanding applications, this 600V transistor delivers exceptional efficiency and thermal performance, making it an ideal choice for switched-mode power supplies (SMPS), lighting, industrial drives, and renewable energy systems.
A key feature of the IPD60R180P7S is its ultra-low on-state resistance (RDS(on)) of just 180 mΩ, which minimizes conduction losses and enhances overall system efficiency. Combined with superior switching characteristics, the device significantly reduces switching losses, enabling higher operating frequencies and more compact designs. Its advanced technology also ensures robust avalanche ruggedness and high reliability, even under harsh operating conditions.
The transistor’s low gate charge (Qg) and improved figure of merit (FOM) further contribute to its high-performance profile, allowing for faster switching and reduced drive requirements. The enhanced body diode provides excellent reverse recovery performance, which is critical for applications involving inductive loads or freewheeling currents.
Packaged in a TO-252 (DPAK) format, the IPD60R180P7S offers both excellent thermal conductivity and mechanical durability, facilitating easier PCB layout and heat dissipation. Its eco-friendly design complies with RoHS directives, aligning with modern environmental standards.
The Infineon IPD60R180P7S sets a new benchmark in high-voltage power transistors by combining ultra-low RDS(on), fast switching capabilities, and outstanding thermal performance. It is an optimal solution for high-efficiency and high-density power conversion systems.
Keywords:
CoolMOS™ P7, High Efficiency, Low RDS(on), Fast Switching, Avalanche Ruggedness
